新工艺生长的InGaN量子点的结构与电学性质研究  

Structure and I-V characteristics of InGaN quantum dots grown by a new method

作　　者：曲宝壮[1] 朱勤生[1] 陈振[1] 陆大成[1] 韩培德[1] 刘祥林[1] 王晓晖[1] 孙学浩[1] 李昱峰[1] 陆沅[1] 黎大兵[1] 王占国[1] 

机构地区：[1]中国科学院半导体所材料开放实验室,北京100083

出　　处：《功能材料与器件学报》2003年第1期13-16,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.60086001;No.69906002);973基金(No.G20000683)

摘　　要：利用金属有机化学气相沉积(MOCVD)技术,采用一种称为低温钝化的新生长方法成功地生长出多层InGaN/GaN量子点。这种方法是对GaN表面进行钝化并在低温下生长,从而增加表面吸附原子的迁移势垒。采用原子力显微镜清楚地观察到该方法生长的样品中岛状的量子点。从量子点样品的I-V特性曲线观察到了共振隧穿引起的负阻效应,其中的锯齿状峰形归因于零维量子点的共振隧穿。A new method was adopted to grow multi-sheet InGaN/GaN quantum dots successfully by metalorganic chemical vapor deposition (MOCVD). The new method can be called passivation low-temperature method which can increase the energy barrier of adatom hopping by surface passivation andlow temperature of growth. The island shaped InGaN quantum dots are revealed by atomic force micro-scopy. Negative differential resistance effect by resonant tunneling can be observed from the I-V characteristics of the 4-sheet InGaN/GaN quantum dots, the indent peaks in which are attributed to resonant tunneling of the zero-dimensional states in the InGaN quantum dots.

关 键 词：量子点 MOCVD 共振隧穿 INGAN/GAN 

分 类 号：TN304.055[电子电信—物理电子学]