氢氧复合注入对SOI-SIMOX埋层结构影响的研究  

Investigation of SOI-SIMOX structure formed by Co-implantation of hydrogen and oxygen

作　　者：易万兵[1] 陈猛[1] 陈静[1] 王湘[1] 刘相华[1] 王曦[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所离子束重点实验室,上海200050

出　　处：《功能材料与器件学报》2003年第1期17-20,共4页Journal of Functional Materials and Devices

基　　金：国家杰出青年科学基金(No.59925205)

摘　　要：实验研究了氢、氧复合注入对注氧隔离技术制备SOI(SiliconOnInsulator)材料埋层结构的影响。用截面透射电子显微镜和二次离子质谱技术分析了退火前后材料的微结构变化。研究表明,氢离子的注入有利于注氧隔离制备的SOI材料埋层的增宽。进一步的结果表明,室温氢离子注入导致的增宽效应比高温注入明显。SOI(Silicon On Insulator) material fabricated by SIMOX(Separation by Implantation of Oxygen) technology with co-implantation of hydrogen and oxygen.The effect of co-implantation of hydrogen and oxygen on the structure of BOX(Buried Oxide)layer which is a crucial part of SOI wereinvestigated. Comparing the microstructure of as-implanted wafer and annealed wafer by analyses of SIMS and XTEM, it is found that the implantation of hydrogen benefits to broaden the thickness of BOX layer.Further results show that the implantation at room temperature broadens BOX layer muchmore than at high temperature.

关 键 词：注氧隔离 氢、氧复合注入 埋层增宽 

分 类 号：TN305.3[电子电信—物理电子学]