LaNiO_3溅射薄膜的光学和电学特性的研究  

Optical and electric properties of rf-magnetron sputtered LaNiO_3 thin film

作　　者：赵强[1] 赖珍荃[1] 黄志明[1] 陈静[1] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理所红外物理国家实验室,上海200083

出　　处：《功能材料与器件学报》2003年第1期71-74,共4页Journal of Functional Materials and Devices

摘　　要：采用LaNiO3陶瓷靶和射频磁控溅射技术在350℃的K9玻璃衬底上制备出了具有较好(100)择优取向的LaNiO3薄膜。通过对不同厚度薄膜的光学、电学以及薄膜结构等物理特性的测试分析,发现薄膜厚度小于100nm时为非晶结构,厚度大于150nm后出现了具有(100)择优取向的LaNiO3相。非晶结构的LaNiO3具有较高的面电阻和高的光学透射率,而晶化的LaNiO3薄膜具有类似于金属的导电能力和光学特性。薄膜的生长动力学和导电分析结果认为薄膜生长的初期会形成一个非晶过渡层。LaNiO3 thin films were deposited on K9 substrates at substrate temperature of 350℃by rf-magnetron sputtering system. The optical characteristics, electric properties and microstructure of thefilms were investigated. The films are found to be amorphous when thickness is less than 100nm, andhighly(100)-orientated when thickness is over 150nm. The results also show that optical and electricproperties of films with amorphous structure are similar to those of dielectrics, while films with crystalstructure provide metallic properties. An explanation for these results is that an amorphous layer willbe formed at the initial stage of film growth.

关 键 词：LaNiO3薄膜 射频溅射 光学特性 表面电阻 

分 类 号：O484[理学—固体物理]