Si-C-N陶瓷在雷达吸收方面的应用研究  

Application of Si-C-N ceramics in radar absorption

作　　者：孟凡君[1] 茹淼焱[1] 刘爱祥[1] 刘宗林[1] 吴秀荣[1] 

机构地区：[1]山东大学化学与化工学院,山东济南250100

出　　处：《材料科学与工艺》2003年第1期93-96,共4页Materials Science and Technology

摘　　要：对前驱体法制备的Si-C-N陶瓷粉末在X波段(8 2～12 4GHz)的雷达波吸收性能进行了研究.通过共氨解甲基氯硅烷和二苯基二氯硅烷(Ph2SiCl2),得到含苯基聚硅氮烷前驱体,经高温裂解和球磨获得Si-C-N陶瓷粉末.实验结果表明,Si-C-N陶瓷能够吸收X波段的雷达波,并且有机硅单体中Ph2SiCl2的摩尔比对最终的Si-C-N陶瓷吸波性能具有显著的影响.当Ph2SiCl2的含量为5%时,Si-C-N陶瓷对X波段雷达波具有最好的反射损耗,在9 1～12 4GHz的范围内,反射损耗R.L.小于-10dB即吸收带宽为3 3GHz,在10 6GHz处具有的最大反射损耗为-15dB.The radar absorbing properties of Si-C-N ceramic powders derived from precursors have been investigated in X band (82-124GHz). When methylchlorosilanes and diphenyldichlorosilane(Ph2SiCl2) were coammonolyzed, polysilazane precursors containing phenyl were obtained which could be transformed into Si-C-N ceramic powders through subsequent pyrolysis at high temperatures and grinding. Experimental results demonstrated that Si-C-N ceramics could absorb radar in X band and that the molar ratios of Ph2SiCl2 in monomers significantly influenced the radar absorbing behavior of the final Si-C-N ceramic powders. When the molar ratio of Ph2SiCl2 in monomers was 5%, the yielded Si-C-N ceramics showed the best reflection loss of radar with reflection loss below-10dB in 91-124GHz frequency range, i.e. the band width was 33GHz, while the maximum reflection loss was-15dB at 106GHz.

关 键 词：雷达波吸收材料 聚硅氮烷 Si-C-N陶瓷 氨解 吸波材料 雷达波 碳化硅 氮化硅 隐身技术 

分 类 号：TQ174.75[化学工程—陶瓷工业] TN951[化学工程—硅酸盐工业]