双极RF功率管的深阱结终端  

Deep-Trench Termination of Bipolar RF Power Devices

作　　者：周蓉[1] 胡思福[1] 李肇基 张庆中[1] 

机构地区：[1]电子科技大学微电子科学与工程系,成都610054

出　　处：《Journal of Semiconductors》2003年第4期396-400,共5页半导体学报（英文版）

摘　　要：给出了双极 RF功率管新的深阱结终端结构 .模拟分析表明 ,具有优化宽度、优化深度且填充绝缘介质的深阱结终端结构能使雪崩击穿电压提高到理想值的 95 %以上 .实验结果表明 ,深阱结终端结构器件 DCT2 6 0的BVCBO为理想值的 94 % ,比传统终端结构器件高 14 % ;与传统结构相比 ,在不减小散热面积的情况下 ,该结构还减小集电结面积和漏电流 ,器件的截止频率提高 33% ,功率增益提高 1dA new deep trench junction termination is proposed.The simulation analysis indicates,deep trench junction termination with certain width,certain depth and filling with isolated dielectrics can increase the avalanche breakdown voltage of bipolar RF power devices to above 95% of the ideal values;experimental results prove the BV CBO of the devices DCT260 with deep trench junction termination are 94% of the ideal values,add up to 14% than that with traditional termination structure.Compared with traditional termination structure,deep trench termination structure does not reduce dissipation area but decreases collector junction area and leakage current,and the f T and K P of RF power devices DCT260 are improved 33% and 1dB respectively.

关 键 词：双极RF功率管 深陆结终端 击穿电压 填充介质 

分 类 号：TN323[电子电信—物理电子学]