Ⅲ族氮化物基发光二极管制造工艺  

Processing technique of Ⅲ-nitrides-based light emitting diodes

作　　者：顾星[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《微纳电子技术》2003年第2期6-9,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金(60046001)

摘　　要：Ⅲ族氮化物是近年来半导体发光器件研究领域中的热点。由于InN,GaN,AlN及由其组成的连续变化固溶体合金所构成的半导体微结构材料,具有宽禁带宽电子漂移饱和速度高、介电常数小及导热性能好等特点,使其在制作短波长、高亮度的发光器件方面具有极其光明的前景。本文系统介绍了以氮化镓为代表的Ⅲ族氮化物基发光二极管的制造工艺。从工作原理、材料生长、掺杂和欧姆接触等各方面,介绍了各种氮化物二极管的不同器件结构和制造工艺。在介绍国际上最新制造技术的同时,对其发展前景做出了展望。Ⅲ-nitrides-based optoelectronic devices attract more and more attentions recently. InN, GaN, A1N and their alloy have superior intrinsic properties, such as wide range of direct transition-type energy band gap, strong bond between nitrogen and each group Ⅲ-atom, high thermal conductivity and high electron saturation velocity, which make them ones of the most promising materials for applications to optoelectronic devices such as light emitting diodes. Light emitting diodes (LED) fabrication techniques including material growth, thin film structure, doping and ohmic contact are systematically presented. Different device structures for a variety of applications are illustrated. The latest technique as well as its prospect is introduced.

关 键 词：Ⅲ族氮化物 发光二极管 制造工艺 氮化镓 薄膜 

分 类 号：TN312.8[电子电信—物理电子学] TN304.23