GaAs MESFET开关的设计和建模  

Design and Modeling of GaAs MESFET Switches

作　　者：申华军[1] 杨瑞霞[1] 高学邦[2] 王同祥[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]河北半导体研究所,石家庄050051

出　　处：《河北工业大学学报》2003年第2期52-57,共6页Journal of Hebei University of Technology

基　　金：天津市自然科学基金项目资助(023601411);河北省自然科学基金项目资助(601048)

摘　　要：简要分析了MESFET开关的等效电路模型和MESFET开关器件的设计考虑,以及材料参数和器件结构对开关性能的影响,并设计制作了6组不同栅宽的MESFET开关.应用Modeling建模软件,分别对6组不同栅宽的MESFET开关进行建模,提取出开关的等效电路模型参数;从参数分析中找到了其随栅宽的线性变化规律,根据此变化规律,可以实现对任意栅宽MESFET开关的定标.The equivalent circuit and the design consideration for MESFET switches are described in this paper. The influence of material and device structure on MESFET switch performance is discussed, and it is pointed that the device parameters must be set reasonably to achieve best performance and fit to process. Under the consideration, six sets of MESFET switches with different gate width have been fabricated. Using modeling software, the equivalent circuit elements of each switch are extracted respectively from S-parameters measured for each switch state. And through statistic analysis it has been found that the key parameters of the switch equivalent circuit scaled linearly with gate width. Based on the quantitative relationship, scaling for switch parameters of any gate width MESFET switch could be easily achieved.

关 键 词：MESFET开关 设计考虑 建模 栅宽 定标 

分 类 号：TN386.3[电子电信—物理电子学]