准分子脉冲激光沉积法制备的ZrO_2薄膜结构和电学性能的研究  

Investigations on the Relations between Crystal Structure and Electrical Properties of ZrO_2 Thin Films

作　　者：章宁琳[1] 宋志棠[1] 邢溯[1] 万青[1] 林成鲁[1] 

机构地区：[1]中国科学院上海微系统和信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《中国激光》2003年第4期345-348,共4页Chinese Journal of Lasers

基　　金：国家 973(G2 0 0 0 0 36 5 0 6 );国家自然科学基金 (J96 0 2 0 2 s和 90 10 10 12 )资助项目

摘　　要：采用准分子脉冲激光沉积法 (PLD)分别在Pt/Ti/SiO2 /Si和SiO2 /Si衬底上制备了ZrO2 薄膜 ,采用扩展电阻法 (SRP)研究了薄膜纵向电阻分布 ;采用X射线衍射法 (XRD)研究了衬底温度对ZrO2 薄膜结晶性能的影响 ;精确测试了薄膜的表面粗糙度 ;讨论了薄膜结晶性能与其电学I V特性之间的关系。ZrO2 thin films were deposited on Pt/Ti/SiO2/Si and SiO2/Si substrates by pulsed deposition (PLD), respectively. Spreading resistance profile (SRP) was used to study the resistivity distribution across the ZrO2 thin films. The relations between the crystal structure and substrate temperature were tested, using X-ray diffraction (XRD). The surface roughness of ZrO2 thin films is measured accurately and the influence of the crystal structure of the ZrO2 thin films on their electrical I-V characteristics is briefly discussed.

关 键 词：准分子脉冲激光沉积法 ZRO2薄膜 衬底温度 结晶结构 电学性能 

分 类 号：O484.1[理学—固体物理]