外加磁场对磁控溅射靶利用率的影响  

Influence of External Magnetic Field on Utilization Ratio ofTarget Materials in Magnetron Sputtering

作　　者：赵新民[1] 狄国庆[1] 朱炎[1] 

机构地区：[1]苏州大学物理系,苏州215006

出　　处：《真空科学与技术》2003年第2期104-106,共3页Vacuum Science and Technology

摘　　要：通过在基片上直接放置一块永久磁铁来研究外加磁场对磁控溅射靶利用率的影响。实验发现 ,外加磁场的引入改变了靶表面附近的磁场分布 ,因而靶的刻蚀环的位置、宽度和深度均发生了明显的变化 ,靶的利用率在S S构型和S N构型中均比无外加磁场时要高。利用空间模拟磁场成功的解释这一实验现象。在S S构型和S N构型中 ,后者靶的刻蚀深度轮廓线比较平坦 ,相对刻蚀深度值更大 。A novel technique has been successfully developed to increase the utilization ratio of various target materials for magnetron sputtering.We experimentally found that application of an external magnetic field may significantly enhance the utilization ratio of the targets with either the S S or S N configurations,as compared to that without external magnetic field because the external magnetic field changes the physical conditions of the target,such as the magnetic field distribution near the target surface,the position,depth and width of the erosion ring.The spatial magnetic field distribution was simulated to understand the possible mechanism The simulated results show that the target with S N configuration hsas higher utilization ratio than that with S S configuration because of its smoother erosion contours and its relatively deeper erosion depth.

关 键 词：磁控溅射靶 利用率 外加磁场 磁控溅射 等离子体 刻蚀环 模拟磁场 薄膜 沉积 制备 

分 类 号：TB43[一般工业技术] TB79