光声谱研究多孔碳化硅的能带特性  

Photoacoustic determination of the energy band characterics for porous silicon carbides

作　　者：李宜德[1] 杜英磊[1] 李纪焕 吴柏枚[3] 

机构地区：[1]中国科学技术大学天文与应用物理系,合肥230026 [2]国立公州大学化学系 [3]中国科学技术大学物理系,合肥230026

出　　处：《物理学报》2003年第5期1260-1263,共4页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :10 1740 70 )资助的课题~~

摘　　要：报道了用UV光照射和不用UV光照射条件下形成的p型α PSC以及原始SiC的光声光谱 (PAS) .从光声Rosenwaig Gersho理论出发 ,计算出多孔SiC的吸收系数与能量的关系 ,得到多孔SiC的能隙低于原始SiC的能隙 ,并深入分析了能隙的变化原因 ,同时 。The photoacoustic spectra from p-type alpha-porous silicon carbides prepared under UV photo-assisted process and under dark-current condition have been measured, the original silicon carbides were also measured. Combined with Rosenewaig-Gersho theory, the photoaconstic spectra are turned into the absorption spectra. It is found that the energy band gaps of the porous silicon carbide were lower than that of the original silicon carbide, and the causes were analyzed in detail. The absorptions near the absorption edge were studied as well.

关 键 词：光声光谱 多孔碳化硅 能带特性 半导体材料 能隙 SIC 

分 类 号：O471.5[理学—半导体物理]