Ⅱ型量子阱In_(1-x)Ga_xAs/GaSb_(1-y)As_y中激子的结合能  

Binding Energies of Excitons in Ⅱ Type In_(1-x_) Ga_xAs/GaSb_(1-y)As_y Quantum Well.

作　　者：华文玉[1] 

机构地区：[1]华东工学院应用物理系

出　　处：《华东工学院学报》1992年第3期10-13,共4页

摘　　要：该文提出ρ和Z相耦合的试探波函数,采用变分法计算了Ⅱ型量子阱In_(1-x)Ga_xAs/GaSb_(1-y)As_y中激子的结合能。发现随合金组分(x,y)的增加结合能增加,随阱宽b的减小,结合能单调上升。当阱宽b在10 nm附近时,材料由半导体转变为半金属。此外,还与Ⅰ型量子阱GaAs/Ga_(1-x)Al_xAs中激子结合能作了比较。The trial wave functions of ρ and Z to couple are developed inthis paper, the binding energies of excitons in Ⅱ type In_(1-x) Ga_xAs /GaSb_(1-y)As_yquantum wells are calculated by means of variational method. The binding en-ergies increase with increasing alloys composition (x,y ), and rise monotoni-cally with decreasing the well width b. When the well width is about 10 nm,In_(1-x) Ga_xAs /GaSb_(1-y)As_y will transform semiconductor into semimetal. In ad-dition,the results are also compared with the binding energies of excitons in Ⅰtype GaAs/Ga_(1-x)Al_xAs quantum wells.

关 键 词：激子 结合能 量子 阱 Ⅱ型 

分 类 号：O471[理学—半导体物理]