利用正向电压下的导纳检测半导体二极管的新方法  

A Novel Method to Characterize Semiconductor Diodes with Admittance at Forward Bias

作　　者：李乐[1] 朱传云[1] 沈君[1] 王存达[1] 

机构地区：[1]天津大学理学院应用物理学系,天津300072

出　　处：《河北师范大学学报（自然科学版）》2003年第3期251-255,289,共6页Journal of Hebei Normal University：Natural Science

基　　金：河北省自然科学基金(200153);河北省教育厅博士基金

摘　　要：提出了一种利用正向电压下的导纳-电压(A-V)特性检测半导体二极管的非破坏性新方法,并给出了它的一般分析.利用这种方法,可以判断一个二极管有无界面层存在,并测量在不同正向电压下串联电阻、结电容、结电压、理想化因子和界面层阻抗的数值.用 A-V方法研究了采用不同的欧姆接触的 Ni/n-GaN肖特基二极管,观察到肖特基二极管的负电容现象,并确认是一种结的效应.研究还发现,无论缺乏n^+层还是缺乏适当的退火都能够导致界面层的形成,界面层应被看作具有非线性电阻和电容的层状结构。A new method to characterize semiconductor diodes with admittance at forward voltage is presented. This method can not only measure the values of series resistance,junction capacitance, junction voltage, and ideality factor at various forward biases, but also detect and measure an interfacial layer in a diode. Various n-GaN Schottky diodes were measured by this method. Negative capacitance(NC) in GaN Schottky diodes is observed, and it is confirmed to be an effect of the junction. The experiments also show that neither an n + layer nor annealing could cause an interfacial layer, and this layer can be considered as a layer structure with nonlinear resistance and capacitance.

关 键 词：半导体二极管 导纳 正向电压 非破坏性检测 A-V方法 串联电阻 结电容 结电压 

分 类 号：TN310.7[电子电信—物理电子学]