氢退火对掺氮硅中氧施主电学行为的影响  

Effect of Hydrogen Anneal on Electric Behavior in NCZ Silicon

作　　者：王晓泉[1] 杨德仁[1] 余学功[1] 马向阳[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2003年第3期353-355,共3页Journal of Materials Science and Engineering

摘　　要：本文主要研究了在氢气下退火对掺氮直拉硅中热施主 (TDs)和氮氧 (N O)复合体的影响。实验结果表明 ,在氢气下低温退火对热施主和N O复合体的生成与在氩气下差不多。这说明低温氢退火注入到硅中的氢的量很少 。In this paper,the effect of hydrogen anneal on thermal donors(TDs) and N-O complexes in N-doped Cz wafer were investigated.The experimental result indicates that the generation of TDs and N-O complexes anaealed in hydrogen ambience is almost the same as those annealed in argon ambience.It is inferred that the concentration of hydrogen implanted in silicon by hydrogen anneal at low temperature is too low to effect the resistivity of silicon obviously.

关 键 词：氮氧复合体 直拉单晶硅 氮 掺杂 氢 退火 热施主 电阻率 半导体 

分 类 号：TN304.12[电子电信—物理电子学]