90nm工艺及其相关技术  

90nm process and its relevant technology

作　　者：翁寿松[1] 

机构地区：[1]无锡市罗特电子有限公司,江苏无锡214002

出　　处：《微纳电子技术》2003年第4期40-44,共5页Micronanoelectronic Technology

摘　　要：ITRS2001规划2004年实现90nm工艺,英特尔、AMD等世界顶级半导体公司将于2003年采用90nm工艺量产微处理器和逻辑器件。这样使ITRS2001整整提前了一年。90nm工艺包括193nm光刻技术、高k绝缘材料、高速多层铜互连技术、低k绝缘材料、应变硅技术和电压隔离技术等新技术。193nm光刻技术是实现90nm工艺达量产的最关键技术,为此,必须采用193nmArFstepper(准分子激光扫描分步投影光刻机)。讨论了90nm工艺达量产的难点,如掩模版成本较高、成品率较低和应用面暂时不宽等。The ITRS2001planned that in2004the90nm technology would be realized.In2003,Intel,AMD etc.semiconductor companies will adopt the90nm technology for batch pro-cess in MPU and logical device.Thus the ITRS Plan2001is one year ahead of time.90nm technology consists of193nm lithography technology,high k insulating material,high speed Cu interconnection technology,low k insulating material,strained Si technology and voltage isolation technology etc.193nm photolithography is the key technology for90nm batch process,so193nm ArF step per must be used in this process.In this paper,the problems of90nm technology mass production are introduced,such as the cost of mask is relatively high,the yield is relatively low and the range of application is relatively narrow etc.

关 键 词：90nm工艺 ArF光刻机 高k/低k绝缘材料 铜互连技术 应变硅技术 电压隔离技术 193nm光刻技术 

分 类 号：TN405[电子电信—微电子学与固体电子学]