用变角XPS技术定量计算超薄SiO_2层厚度  

Quantitative determining of the thickness of ultrathin SiO_2 layer based on the angle-dependent XPS technology

作　　者：严少平[1] 汪贵华[2] 李锋[2] 顾广颐[1] 

机构地区：[1]安徽理工大学数理系,安徽淮南232001 [2]南京理工大学电光学院,江苏南京210094

出　　处：《合肥工业大学学报（自然科学版）》2003年第3期452-455,共4页Journal of Hefei University of Technology：Natural Science

基　　金：安徽省教育厅自然科学基金资助项目(2001kj227zc)

摘　　要：采用变角XPS技术分析单晶Si和非晶Si衬底上覆盖SiO2薄层的样品,比较变角XPS定量计算超薄SiO2层厚度的几种方法及特点,从而获得一种比较可靠稳定的分析计算方法。实际应用证明,变角XPS技术可用于MOS集成器件的超薄栅氧化层厚度常规分析和测试。The ultrathin SiO2 layer for the metaloxidesemiconductor(MOS) capacitor on the crystal Si and amorphous Si wafer is investigated by angledependent Xray photoelectron spectroscopy(XPS). Several methods used to determine quantitatively the thickness of the ultrathin SiO2 layer based on the experiments by angledependent XPS are compared and analyzed,and a stable and reliable method is obtained. It is believed that the angledependent XPS technology can be used for determining the thickness of the gate oxide of the very largescale integration MOS capacitor and the obtained method is practical.

关 键 词：变角XPS技术 定量计算 超薄SiO2层 超薄栅氧化层 厚度测量 薄膜 MOS集成器件 金属-氧化物-半导体器件 

分 类 号：O484.5[理学—固体物理] TN386.1[理学—物理]