射频微机械CPW开关的研究  

Research for RF Micromechanical CPW Switch

作　　者：张正元[1] 温志渝[1] 徐世六 张正番 黄尚廉[1] 

机构地区：[1]重庆大学光电工程学院,重庆400044 [2]国家模拟集成电路重点实验室,重庆400060

出　　处：《电子学报》2003年第5期671-673,共3页Acta Electronica Sinica

基　　金：重庆市科技攻关项目 (No 2 0 0 1 70 36)

摘　　要：本文采用聚酰亚胺牺牲层技术和二氧化硅介质隔离技术 ,成功地在绝缘多晶硅衬底上研制出一种射频微机械CPW开关 .初步测试结果如下 :开态电容为 0 2 1pF ,关态电容为 6 1pF ,致动电压为 2 2V ,关态下的隔离度为35dB ,开态下插入损耗为 3dB .该工艺完全与硅基IC工艺兼容 ,这为射频微机械CPW开关与IC实现单片集成化 。An RF micromechanical CPW switch on the isolation polysilicon is developed by using polymide sacrificial layer, and by dielectric isolating technology. The preliminary test results are as follows: the Coff and Con are o.21 pF, 6.1 pF respectively; the actuated voltage is 22 V. The isolation is 35 dB in the off state, and insertion loss is 3 dB in the on state. The process is compatible with silicon IC, so is the basis of monolithically integrating RF micromechanical switch and IC for high reliability and low volume.

关 键 词：射频微机械开关 CPw开关 金属膜 绝缘层 牺牲层 

分 类 号：TN820.83[电子电信—信息与通信工程]