MOCVD生长1.06μm InGaAs/GaAs量子阱LDs  

MOCVD Growth of InGaAs/GaAs Quantum Well for 1064 nm LDs

作　　者：潘教青[1] 黄柏标[1] 张晓阳[1] 岳金顺 秦晓燕[1] 于永芹[1] 尉吉勇[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100 [2]山东华光光电子有限公司,山东济南250010

出　　处：《光电子．激光》2003年第6期590-593,共4页Journal of Optoelectronics·Laser

摘　　要：用低压MOCVD生长应变InGaAs/GaAs量子阱,采用中断生长、应变缓冲层(SBL)、改变生长速度和调节Ⅴ/Ⅲ等方法改善InGaAs/GaAs量子阱的光致发光(PL)质量。PL结果表明,10s生长中断结合适当的SBL生长的量子阱PL谱较好。该量子阱应用于1.06μm激光器的制备,未镀膜的宽条激光器(100μm×1000μm)有低阈值电流密度(110A/cm2)和高的斜率效率(0.256W/A,per.facet)。Strained InGaAs/GaAs quantum Wells(QWs) were grown by lowpressure metalorganic chemical vapor deposition(MOVCD).Growth interruption and strain buffer layer(SBL) were introduced to improve the photoluminescence(PL) performance of the InGaAs/GaAs QW.1 064 nm wavelength lasers using the QW were grown and processed into devices.Broad area lasers (100 μm×1 000 μm) show low threshold current densities (110 A/cm2) and high slop efficiency (0.256 W/A,per facet).

关 键 词：MOCVD INGAAS/GAAS量子阱 LDs 半导体激光器 应变量子阱 中断生长 应变缓冲层 

分 类 号：TN248.4[电子电信—物理电子学]