Si衬底上无坑洞3C-SiC的外延生长研究  

Growth of Voids-free 3C-SiC Heteroepitaxial Layers on Si(100) and Si(111) Substrates by LPCVD

作　　者：孙国胜[1] 王雷[1] 罗木昌[1] 赵万顺[1] 朱世荣[1] 李晋闽[1] 曾一平[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《固体电子学研究与进展》2003年第2期135-138,共4页Research & Progress of SSE

基　　金：国家重点基础研究专项经费 ( G2 0 0 0 0 683);国家 863高技术研究与发展项目 ( 2 0 0 1AA3110 90 )

摘　　要：在冷壁式不锈钢超高真空系统上 ,利用低压化学气相淀积 (LPCVD)方法在直径为 5 0 mm的单晶 Si(1 0 0 )和 Si(1 1 1 )晶向衬底上生长出了高取向无坑洞的晶态立方相碳化硅 (3 C-Si C)外延材料 ,利用反射高能电子衍射 (RHEED)和扫描电镜 (SEM)技术详细研究了 Si衬底的碳化过程、碳化层的表面形貌及缺陷结构 ,获得了界面平整光滑、没有空洞形成的 3 C-Si C外延材料 ,并采用 X-射线衍射 (XRD)、双晶 X-射线衍射 (DXRD)和霍尔(Hall)Highly oriented voids-free 3C-SiC heteroepitaxial layers have been grown on 2″ Si(100)and Si(111) substrates,respectively,by LPCVD.The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) and Si(111) have been studied using RHEED and SEM.It has been shown that the optimized carbonization temperatures are 1 100 and 1 000 °C for Si(100)and Si(111) surfaces,respectively,which is necessary for the growth of voids-free 3C-SiC on Si substrates.The structures and electrical properties of SiC layers were characterized by XRD,DXRD and Hall measurements.The maximum Hall mobility of 240 cm 2/V·s was obtained at room temperature.

关 键 词：无坑洞立方相碳化硅 低压化学气相淀积 单晶硅树底 SiC 外延生长 LPCVD 宽带隙半导体材料 

分 类 号：TN304.24[电子电信—物理电子学]