MTJ MRAM的特性分析与设计  

Characteristics Analysis and System Design for MTJ MRAM

作　　者：尚也淳[1] 刘忠立[1] 

机构地区：[1]中科院半导体所微电子研发中心,北京100083

出　　处：《固体电子学研究与进展》2003年第2期229-235,共7页Research & Progress of SSE

摘　　要：对 MTJ(磁隧道结 )的 GMR(巨磁阻 )效应进行了分析。 MTJ的结构、形态和工作条件会对 GMR效应产生不同的影响。提出了一种 4× 1位 MTJMRAM(磁存储器 )的电路结构 ,每个 MRAM的存储单元由一个MTJ和一个 MOSFET构成 ,用 MTJ两磁极磁化方向的相对取向表示所存储的数据 ,数字线和位线电流产生磁场的共同作用可完成 MRAM数据的写入。The physical basis for GMR effect in MTJ is studied. It shows that the characteristics of MTJ is mainly governed by its structure, magnetic shape anisotropy and working conditions, such as temperature and bias voltage. A new 4×1 MTJ MRAM is designed. Each memory cell is composed of a single MOSFET and a single MTJ element. The relative magnetization, parallel or anti-parallel, of the free layer with respect to the fixed layer is used for information storage. During read operation, the signal generated by the current flows through the selective cell depends on the resistance of the MTJ. During program, the MTJ in the intersection of the bit line and the digit line is reversed by the combined magnetic field generated by the current pulses that runs through the two lines.

关 键 词：磁隧道结 巨磁阻 MTJ MRAM 磁存储器 电路结构 磁阻率 

分 类 号：TP333.3[自动化与计算机技术—计算机系统结构]