单元特性提取中采样点偏离现象的研究  

A Study on Deviation of Sampling Points in Cell Characterization

作　　者：李伟良[1] 葛海通[1] 罗晓华[1] 梁中书[1] 严晓浪[1] 

机构地区：[1]浙江大学超大规模集成电路设计研究所,浙江杭州310027

出　　处：《微电子学》2003年第1期22-25,共4页Microelectronics

摘　　要：　为使应用于集成电路设计中的单元时序信息库更能反映实际情况,研究了特性提取中出现的采样点分布偏移和格点偏离现象,并提出了有效的解决方法。该方法通过建立查表模型,无需多次重复仿真就能准确定位任意采样点。理论分析和仿真结果均表明,该方法不仅耗费时间少,定位也能满足单元建库的要求,经过实例化后,能很好地应用于超深亚微米工艺下的单元特性提取。The distributing deviation of sampling points and offgrid phenomenon in cell characterization are studied in this paper A new method is provided to make the generated models, which are used in the design of integrate circuits, accord with the fact Based on the lookup table model, the method can fix on any sampling point with fewer simulations Both theoretical analysis and simulation results demonstrate that the method not only satisfies the modeling generation, but also consumes less time Meanwhile, it can be applied more efficiently to cell characterization for super deep submicron process 

关 键 词：超大规模集成电路 特性提取 采样点 查表模型 超深亚微米工艺 时序信息库 采样点 

分 类 号：TN47[电子电信—微电子学与固体电子学]