磁控反应溅射法低温制备氮化硅薄膜  

Silicon Nitride Thin Films Prepared byMagnetron Reaction Sputtering

作　　者：邱春文[1] 陈雄文[1] 石旺舟[2] 欧阳艳东[1] 

机构地区：[1]汕头大学物理系,汕头515063 [2]上海华东师范大学物理系,上海200062

出　　处：《汕头大学学报（自然科学版）》2003年第2期35-39,共5页Journal of Shantou University：Natural Science Edition

摘　　要：采用射频 (RF)磁控反应溅射法制备出氮化硅薄膜 .从红外吸收光谱可见 ,氮气参加了反应并生成 Si- N键 ,薄膜中含有少量的 Si- O键和 Si- H键 ;薄膜的成分与制备过程中基片温度、射频功率等工艺参数密切相关 ,当基片温度升高到 40 0℃时 ,薄膜中基本不再含 Si- H键 ,氮化硅薄膜的纯度得到提高 .Silicon Nitride thin film was prepared by RF magnetron reaction sputtering.We found that the thin film's composition was intensively relative to the temperature of substrate,RF power and other facters.When the temperature was elevated to 400°C,there was litter Si-H bond in the film.Therefore we can prepare high-purified Silicon Nitride thin film by elevating the temperature of substrate during deposition.

关 键 词：氮化硅薄膜 射频磁控反应溅射法 制备过程 制备工艺 红外吸收光谱 基片温度 射频功率 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055