接近式光刻的计算机模拟研究  

Study on Computer Simulation of Proximity Lithography

作　　者：田学红[1] 刘刚[1] 田扬超[1] 张新夷[2] 张鹏[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029 [2]复旦大学同步辐射研究中心,上海200433

出　　处：《微细加工技术》2003年第2期43-48,共6页Microfabrication Technology

基　　金：国家重点基础研究发展规划(973)资助项目(G1999033109)

摘　　要：在接近式光刻中,衬底上的光强分布主要是受掩模与衬底间的间隙引起的衍射影响。一般的模拟分析中,都是利用菲涅尔近似模型进行分析。根据光的标量衍射理论,分析了菲涅尔近似模拟的误差起源,并对菲涅耳近似模型进行了修正,得到了更加准确的类菲涅耳近似模型,对这两种模型的模拟结果进行了比较。结果表明,即使在比较接近掩模表面或非傍轴条件下,类菲涅尔近似模型也能够得到比较精确的模拟结果。The light density on the wafer mainly depends on the diffraction produced by the gap between the mask and the wafer in proximity lithography. Fresnel diffraction model is used to simulate this diffraction normally. Analyzing the error of Fresnel diffraction model and modifying it according to the scalar diffraction theory of light propagation,a more accurate analog Fresnel diffraction model is constructed.The simulation results of two models are compared and show that the analog Fresnel diffraction model can get more accurate simulation result even under the nonparaxial and proximity conditions.

关 键 词：接近式光刻 计算机模拟 标量衍射理论 菲涅尔近似模型 类菲涅耳近似模型 

分 类 号：TN305.7[电子电信—物理电子学] TP391.9[自动化与计算机技术—计算机应用技术]