FEL诱导半导体材料非线性光吸收  

Free-electron laser induced nonlinear optical absorption in semiconductors

作　　者：江俊[1] 李宁[1] 陈贵宾[1] 陆卫[1] 王明凯[2] 杨学平[2] 吴刚[2] 范耀辉[2] 李永贵[2] 袁先漳[3] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]中国科学院高能物理研究所自由电子激光实验室,北京100080 [3]温州师范学院物理与电子信息科学系,温州325027

出　　处：《物理学报》2003年第6期1403-1407,共5页Acta Physica Sinica

基　　金：中国科学院预研项目资助的课题~~

摘　　要：应用北京自由电子激光 (BFEL)对典型的红外光电子材料Hg1 -xCdxTe,InSb和InAs进行了非线性光吸收研究 .利用FEL的高光子密度和皮秒量级的短脉冲宽度特性 ,研究了双光子吸收 (TPA)以及光生载流子吸收 (FCA)共同作用机理 ,从实验上直接证实了在强入射能量下 ,FCA是不可忽略的光吸收过程 。Using a free-electron laser source, we have studied the nonlinear absorption in InSb, Hg1-xCdx Te and InAs semiconductors. By measuring the transmission, two-photon-absorption( TPA)has been investigated as a function of the input power. In two cases, a distinct saturation of TPA coefficients has been observed. Using an extension of these methods, we demonstrated that the reduced transmission at high intensities is primarily due to free-carrier-absorption(FCA) of the electrons and holes generated by TPA,not directly due to the TPA process. Furthermore, by careful calculation, we have extracted the convincing cross section of FCA.

关 键 词：FEL 自由电子激光 半导体材料 非线性光吸收 双光子吸收 光生载流子吸收 HG1-XCDXTE INSB InAs 碲镉汞化合物 砷化铟 锑化铟 

分 类 号：O437[机械工程—光学工程]