一种具有新耐压层结构的IGBT  

A kind of IGBT with the new structure of voltage-sustaining layer

作　　者：高琰[1] 亢宝位[1] 程序[1] 

机构地区：[1]北京工业大学电子信息与控制学院,北京100076

出　　处：《半导体技术》2003年第7期64-68,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(69836010)

摘　　要：介绍了一种具有新型耐压层结构的IGBT——低功耗IGBT。新结构用三重扩散的方法在n- 单晶片上引入了n+ 缓冲层。保留了NPT-IGBT中薄而轻掺杂的背p+层和高载流子寿命的本质优点,同时又具有PT-IGBT中n-/n+ 双层复合的薄耐压层 (即薄基区) 的优点。计算机仿真得出,新结构IGBT的关断损耗比传统的IGBT减小50%左右。针对LPL-IGBT的创新点——新耐压层结构,我们还进行了优化仿真。A kind of IGBT with the new structure of voltage-sustaining layer—— low power lossIGBT (LPL-IGBT) is introduced in this paper. A n+ buffer layer is manufactured on the n- bulk siliconby the tripple-diffusion. LPL-IGBT has the characteristics of NPT-IGBT: thin and lightly-doped backp+ layer and the high carriers lifetime. At the same time, LPL-IGBT also has the characteristic of PT-IGBT: n-/n+ double layers which make the thin base possible. Computer simulation results show thatLPL-IGBT has reduced the turn-off power loss to 50% of those of the tranditional IGBTs. Simulationswere carried out to optimize the new n-/n+ voltage-sustaining layer.

关 键 词：IGBT 耐压层结构 关断损耗 仿真 制造工艺 

分 类 号：TN322.8[电子电信—物理电子学]