氧环境扫描电镜对氧化物的荷电补偿  

Charging Compensation of Oxides by Oxygen Environmental Scanning Electron Microscope

作　　者：史佳新[1] 吉元[1] 徐学东[1] 肖卫强[1] 张隐奇[1] 郭汉生[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022

出　　处：《北京工业大学学报》2003年第2期247-250,共4页Journal of Beijing University of Technology

基　　金：国家自然科学基金(60171024)

摘　　要：在(5×10^(-3))～(2×10^(-2))Pa的氧环境扫描电镜(SEM)中观察到由入射电子束辐照引起的Al_2O_3、SiO_2等氧化物荷电现象得以减轻。氧化物受激氧解吸,使样品表面的氧空位成为荷电势阱而产生荷电。通过氧气氛中提供的氧离子对表面缺陷的修复作用,使氧化物的荷电现象得到补偿。氧环境扫描电子显微分析方法是针对氧化物类绝缘材料荷电的一种简便的、自动调节的荷电补偿方法。Al_2O_3的俄歇电子能谱证明,在6×10^(-6)Pa的氧压下可以完全消除Al_2O_3的表面荷电。Charging phenomena of oxides ( such as A12O3 and SiO2, etc.) caused by the irradiation of incident electron beam have been reduced in an oxygen environmental scanning electron microscope (SEM) at the O2 pressure of 5 x 10-3 Pa to 2 x 10-2Pa. The desorption of stimulated oxygen in oxides makes the oxygen vacancies on the surface of sample become the charging potential trip so as to produce charging phenomenon. The charging phenomena on oxides have been compensated by repairing surface defects by the oxygen ions produced in the oxygen atmosphere. The oxygen environmental scanning electron microscopy is a simple and automatic regulated charging compensation method on insulating oxide materials. Al2O3 spectra of Auger electron spectroscope (AES) prove that the surface charging of the Al2O3 can be completely eliminated under the O2 pressure of 6x10-6Pa.

关 键 词：氧环境 扫描电镜 氧化物 荷电补偿 二次电子像 绝缘材料 

分 类 号：TN16[电子电信—物理电子学] TB303[一般工业技术—材料科学与工程]