全离子注入NPN型偶载场效应晶体管的离子注入工艺研究  

A STUDY ON THE ION IMPLANTATION OF NPN VDCFET

作　　者：于理科[1] 郭慧民[1] 任永玲[1] 李国辉[1] 姬成周[1] 

机构地区：[1]北京师范大学教育部射线束与材料改性重点实验室

出　　处：《北京师范大学学报（自然科学版）》2003年第3期320-324,共5页Journal of Beijing Normal University(Natural Science)

基　　金：国家自然科学基金资助项目 (6 0 2 4 4 0 0 4 ) ;北京市自然科学基金资助项目 (4 96 2 0 0 4 )

摘　　要：通过trim软件和高斯模型对离子注入后快速退火载流子分布进行设计 ,初步构造出离子注入的分布图像 ,通过与实验结果比较 ,进一步完善模型 .选用高斯与半高斯混合模型 ,得到了与实验结果更吻合的模拟方案 .从而找到了研制NPN型偶载场效应晶体管 (VDCFET)离子注入的最佳条件 ,并研制了性能良好的VDCFET .Vertical dual carrier field effect transistor(VDCFET) is a new design of transistor which contains two different kind of carriers during the working condition. The key part of VDCFET is the contact region which is also called the field effect channel. The shorter the channel, the better the working function of the transistor. If VDCFET is fabricated by ion implantation, the design of ion implantation is very difficult. By using software of trim and a Gauss model, the distribution of ion implantation is obtained. Compared with the experimental results, the method is improved and a simulation method called half Gauss model is adopted. On a large scale, the result of the new method is access to the experimental results. As a result, the optimal factor of fabricating VDCFET is obtained and a good VDCFET is fabricated.

关 键 词：NPN型偶载场效应晶体管 离子注入工艺 VDCFET 离子注入射程分布理论 高斯模型 混合模型 

分 类 号：TN386.6[电子电信—物理电子学] TN305.3