半导体晶片Fe/Ni玷污的紫外荧光谱研究  

STUDY OF Fe/Ni CONTAMINATION IN SEMICONDUCTOR WAFER BY ULTRAVIOLET FLUORIMETRY

作　　者：曾庆城[1] 王水凤[1] 罗庆芳[1] 严中一 张霖霖[2] 

机构地区：[1]江西大学应用物理研究所 [2]江西大学中心实验室

出　　处：《江西大学学报（自然科学版）》1992年第1期53-58,共6页

摘　　要：针对Si,GaAs半导体晶片中金属杂质玷污的问题,本文提出了紫外光致荧光谱的检测方法。常温下,晶片中的Fe,Ni杂质玷污可产生紫外特征荧光峰。这种新的检测方法是非破坏性的,并适用于φ76.2mm,φ100mm大圆片的直接检验,而且具有较高的检测灵敏度。For the problem of metal impurity contamination in semiconductor wafer Si and GaAs has been puted forth ultraviolet-induced fluorimetry in this paper. The results show that some impurities such as Fe and Ni have characteristic peak wavelength at room temperature. This new method is not only nondestructive but also applicable to examined of large wafers in diameter 76.2 mm or 100 mm, and has high sensitivity.

关 键 词：紫外光致荧光 半导体晶片 金属杂质 

分 类 号：TN304.12[电子电信—物理电子学]