应用ICP-AES表征高剂量氧注入过程中的金属污染  

Characterization of Metallic Impurity Contamination During High Dose Implantation of Oxygen into Silicon Using ICP-AES

作　　者：马芙蓉[1] 李雪春[2] 梁宏[1] 吴虎才[1] 李晓民[1] 陈如意[1] 罗晏[1] 卢志恒 

机构地区：[1]北京师范大学射线束技术与材料改性教育部重点实验室 [2]北京师范大学物理系,北京100875

出　　处：《Journal of Semiconductors》2003年第8期813-816,共4页半导体学报（英文版）

基　　金：国家自然科学基金 (批准号 :699760 0 5 );北京市科委(合同号 :95 5 0 3 12 0 0 0 )资助项目~~

摘　　要：研究了采用感应耦合等离子体 原子发射光谱技术表征高剂量氧注入单晶硅制备SIMOX SOI材料过程中金属杂质污染的有效性 .同时研究了采用强酸清洗、加SiO2 膜覆盖等方法对降低污染程度的效果 .利用ICP技术可以对大面积或整个硅片进行采样 ,检测结果是一种整体的平均效果 .采用强流氧注入机进行高剂量氧注入 ,发现金属杂质污染元素主要是Al、Ar、Fe、Ni;注入后强酸清洗样品可有效降低Al污染 ;6 0nm厚的二氧化硅注入保护膜可阻挡一半的上述金属污染 .The characterization by means of inductively coupled plasma atomic emission spectroscopy (ICP AES) for metal impurity contamination produced during the high dose oxygen ion implantation for fabricating SIMOX SOI materials is investigated.The effect for the reduction of the contamination is studied by the methods of strong acid cleaning and SiO 2 film covering.It is found that high dose O + implantation brings metal contaminations mainly including Al,Ar,Fe,Ni.But strong acid cleaning after implantation effectively reduces these metal impurity of the surface silicon layer,especially Al,and 60 nm SiO 2 protecting film on silicon for implantation can cut down half of the metal contamination.

关 键 词：SOI材料 金属污染 感应耦合等离子体技术 

分 类 号：TN305[电子电信—物理电子学]