商品有机玻璃片微结构的深刻蚀研究  

Study on Deep Reactive Ion Etching of Polymethylmethacrylate Sheet Microstructure

作　　者：黄龙旺[1] 杨春生[1] 丁桂甫[1] 

机构地区：[1]上海交通大学微纳米科学技术研究院薄膜与微细加工重点实验室,上海200030

出　　处：《压电与声光》2003年第3期249-251,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50075055)

摘　　要：研究应用O2反应离子刻蚀(RIE)直接深刻蚀商用有机玻璃(PMMA)片,以实现微结构的三维微加工,工艺简单,加工成本较低,为微器件的高深宽比加工提出了新方法。试样采用Ni作掩膜,以普通的光刻胶曝光技术和湿法刻蚀法将Ni掩膜图形化。工作气压、刻蚀功率等工艺参数对刻蚀速率影响较大。在刻蚀过程中,掩膜上的金属粒子会被刻蚀气体离子轰击而溅射散落出来,形成微掩膜效应。利用这种RIE技术,在适当的溅射功率及气压下,刻蚀速率较快,且获得了较陡直的微结构图形,刻蚀深度达120μm。In this paper, deep reactive ion etching of commercial polymethylmethacrylate(PMMA) to fabricate microstructures is studied The process is simple and cost low We put forward a new reactive ion etching technique for high aspect ratio micromachining We use Ni as mask that is patterned by chemical etching, a general photoresist technology The process parameters (O2 pressure, etching power etc) have a large effect on the etching ratio During reactive ion etching PMMA, metal atoms on Ni mask sputter out, which are bombarded by plasma,and cause micromask effect Under moderate RF power and gas pressure, we use this technology to deep RIE PMMA Etching ratio is fast and a vertical sidewall microstructure is achieved with etching height of 120 μm

关 键 词：有机玻璃 反应离子刻蚀 微结构 PMMA 刻蚀参数 刻蚀速率 刻蚀形貌 

分 类 号：TN305.7[电子电信—物理电子学]