用于射频领域的高调节范围MEMS压控电容  

Design and Simulation of a High-tuning-range MEMS Voltage Controlled Capacitor for RF Applications

作　　者：梁雪冬[1] 刘泽文[1] 刘理天[1] 李志坚[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《压电与声光》2003年第3期252-254,共3页Piezoelectrics & Acoustooptics

基　　金：国家"九七三"重点基金项目

摘　　要：在分析了传统平行极板MEMS压控电容的基础上,提出了一种新型的高调节范围MEMS压控电容。与传统的平行极板电容不同的是,它由三对极板构成。其中一对是起电容作用的极板,另外两对是控制极板。交流信号通过电容极板传输,而直流控制电压施加在控制极板上。使用有限元分析软件Ansys对该电容进行了模拟,得出其调节范围达214%,大大超出了传统的平行极板电容在调节范围上的自然限制(50%)。另外,设计了该电容的工艺流程。其工艺流程较简单,很容易集成在标准的RF电路中。Based on the analysis of traditional parallelplate capacitor,we present a novel MEMS tunable capacitor with a wide tuning range.Different from the conventional parallelplate capacitors,this capacitor consists of three pairs of plates.One pair of them are used as capacitor plates,and the other two are used as controlling plates.AC signal passes through the capacitor plates while DC controlling voltage is applied on the controlling plates.By simulation with Ansys software,we get the tuning range is up to 214%,largely beyond the theoretical tuning range limit(50%)of conventional twoparallelplate capacitors.It can be easily integrated in RF circuits for this simple process of fabrication.

关 键 词：MEMS压控电容 崩塌效应 控制极板 悬臂梁 牺牲层 

分 类 号：TM532.5[电气工程—电器]