谐振腔增强型光电探测器的角度相关特性研究(英文)  

The Incident Angle Dependence of Quantum Efficiency of GaAs Based RCE Photodetectors

作　　者：梁琨[1] 杨晓红[1] 杜云[1] 吴荣汉[1] 

机构地区：[1]中国科学院半导体研究所,国家集成光电子学国家重点联合实验室,北京100083

出　　处：《光子学报》2003年第5期637-640,共4页Acta Photonica Sinica

基　　金：SupportedbytheNationalNaturalScienceFoundationofChina(GrantNo.60 13 70 2 0 )andtheNationalFundamentalResearchandDevelopmentProgramofChina(G2 0 0 0 0 3 660 3 )

摘　　要：采用MBE生长In0 .3 Ga0 .7As/GaAs和GaInNAs/GaAs量子阱为有源区的器件结构材料 ,制备出工作在10 60nm及 1310nm波段的谐振腔增强型光电探测器 .对谐振腔增强型光电探测器的空间角度相关特性进行了实验与物理分析 ,改变光束入射角度 。The theoretical analysis and experimental measurement on the incident angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40 nm wavelength variation of peak quantum efficiency is obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence is characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum such applications in space optical detections and communications.

关 键 词：谐振腔增强型光电探测器 空间角度相关特性 量子阱 GAINNAS GAAS 砷化镓 半导体 

分 类 号：TN36[电子电信—物理电子学]