一种新型SOI Mach-Zehnder干涉型电光调制器的设计  

Design of a Novel Mach-Zehnder Interference Electrooptical Modulator in Silicon-on-insulator

作　　者：严清峰[1] 余金中[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《光子学报》2003年第5期555-558,共4页Acta Photonica Sinica

基　　金：国家自然科学重大基金 ( 69990 5 40;698962 60 );"九七三"(G2 0 0 0 0 3 66)资助项目

摘　　要：在超紧缩双曲锥形 3dB多模干涉耦合器的基础上 ,设计了一种新的Silicon on insulator(SOI)Mach Zehnder干涉型电光调制器 与传统的Y分支器相比 ,双曲锥形 3dB耦合器的制作容差大 ,而长度缩短了近 30 % ,使得整个器件的尺寸大幅减小 调制区采用横向注入的PIN结构 ,模拟结果表明 :当外加偏压为 0 .86V时 ,器件的调制深度最大 ,此时注入电流为 13.2mA ,对应的器件功耗为 11.A novel Mach-Zehnder interference electrooptical modulator (MZI) in silicon-on-insulator (SOI) has been designed, based on ultra-compact hyperbolic 1×2 3-dB multimode interference (MMI) coupler. Comparing with the conventional Y-branch coupler, the hyperbolic 3-dB MMI coupler exhibits larger fabrication tolerance and shorter length, resulting in a very compact MZI structure. A transversal PIN structure is introduced in the modulation area. The injected free carriers concentration distribution in the silicon guiding layer of the modulation area, as well as the modulation characteristics of the device,is simulated by means of 2-D semiconductor device simulator PISCES-Ⅱ. The simulation results show that the injected free carriers concentration distribution in the central guiding layer is uniform. The device has the largest modulation depth at an applied forward bias of 0.86 V on the PIN diode, while the injection current is 13.2 mA and the power consumption is 11.4 mW

关 键 词：SOI Mach-Zehnder干涉型电光调制器 多模干涉耦合器 等离子色散效应 硅基光波导器件 

分 类 号：TN252[电子电信—物理电子学] TN761