衬底温度对强流脉冲离子束烧蚀沉积类金刚石薄膜化学结构的影响  

Effects of Substrate Temperature on the Chemical Structure of Diamond-like Carbon Films Deposited by High-intensity Pulsed Ion Beam Ablation

作　　者：梅显秀[1] 马腾才[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连116024

出　　处：《高等学校化学学报》2003年第7期1262-1265,共4页Chemical Journal of Chinese Universities

基　　金：国家自然科学重点基金 (批准号 :19835 0 30 )资助

摘　　要：采用强流脉冲离子束 (High-intensity pulsed ion beam,HIPIB)烧蚀技术在 Si(1 0 0 )基体上沉积类金刚石 (Diamond-like carbon,DLC)薄膜 ,衬底温度的变化范围为 2 98～ 6 73K.利用 Raman光谱和 X射线光电子谱 (XPS)对 DLC薄膜的化学结合状态与衬底温度之间关系进行研究 .薄膜 XPS的 C1 s谱的解谱分析得出薄膜中含有 sp3 C(结合能为 2 85 .5 e V)和 sp2 C(结合能为 2 84 .7e V)成分 ,根据解谱结果评价薄膜中 sp3 C含量 .根据 XPS分析可知 ,衬底温度低于 4 73K时 ,sp3 C的含量大约为 4 0 %左右 ;随着沉积薄膜时衬底温度的提高 ,sp3 C的含量降低 ,由 2 98K时的 4 2 .5 %降到 6 73K时的 8.1 % ,从 5 73K开始发生 sp3 C向 sp2 C转变 .Raman光谱表明 ,随着衬底温度的提高 ,Raman谱中 G峰的峰位靠近石墨峰位 ,G峰的半峰宽降低 ,D峰与G峰的强度比 ID/IG 增大 ,说明薄膜中的 sp3 C的含量随衬底温度增加而减少 .Diamond-like carbon(DLC) films have been deposited on the silicon(Si) substrate at different substrate temperatures by using high-intensity pulsed-ion-beam(HIPIB) ablation with graphite as the targets. Raman and XPS spectroscopies were used to study the relationship between the chemical binding state of DLC thin films and substrate temperature. The analysis result of the XPS of the C 1s core level of DLC thin films obtained at different substrate temperatures was presented. These spectra are deconvoluted into different contributions at 285.5 and 284.7 eV, which are respectively attributed to sp 3 and sp 2 hybridized carbon atoms. XPS spectra show when the substrate temperature is lower then 573 K, the content of sp 3 carbon in the films is about 40%; when the substrate temperature is increased, the content of sp 3 carbon in the films decrease; when the substrate temperature is 573 K, the transition from sp 3 C to sp 2 C occurre. Raman spectrum shows that with the increase of substrate temperatures, the G peak position shifted to the peak position of graphite the full width at half-maximum decreased from 176 to 122 cm -1 and the ratio of I D/I G increased from 1.56 to 3.62. The content of sp 3 carbon in the films may be related with the G peak position, the full width at half-maximum of G peak and the ratio I D/I G.

关 键 词：衬底温度 强流脉冲离子束烧蚀 沉积技术 类金刚石薄膜 化学结构 化学结合状态 

分 类 号：O613.71[理学—无机化学] O484[理学—化学]