AlGaN/GaN异质结辐射感生界面态电荷对二维电子气输运的影响  

Effect of Irradiation Induced Heterointerface State Charges on 2DEG Transport Property in AlGaN/GaN Heterostructures

作　　者：范隆[1] 李培咸[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子所

出　　处：《Journal of Semiconductors》2003年第9期937-941,共5页半导体学报（英文版）

基　　金：国防重大预研资助项目 (批准号 :4 130 80 6 0 10 6 )~~

摘　　要：根据荷电中心与自由载流子间的库仑散射作用 ,给出了异质结辐射感生界面态电荷对二维电子气 (2DEG)迁移率的散射模型 .计算了在不同沟道电子面密度下 ,界面态电荷密度与其所限制的迁移率之间的关系 .运用马德森定则分析了辐射感生界面态电荷散射对总迁移率的影响 .分析表明 ,辐射感生界面态电荷在累积到一定量后 ,会显著影响迁移率 ,一定程度上提高Based on the Coulomb scattering principle between charged centers and free carriers,a mobility model limited by scattering of irradiation induced heterointerface state charges in AlGaN/GaN heterostructure is presented.The dependences of the mobility component from heterointerface state charges scattering on its charge density are calculated with various two-dimensional electron gas densities (N s) .The influence of irradiation induced heterointerface state charges scattering on total initial mobility is analyzed by means of Matthiessen's rule.The calculated results show that irradiation induced heterointerface state charges,after reaching a critical value,can evidently degrade total mobility,and a certain extent increaseing 2DEG sheet density (N s) can restrain the scattering effect of heterointerface state charge.

关 键 词：A1GaN/GaN异质结 辐射 界面态电荷 二维电子气 迁移率 

分 类 号：TN304[电子电信—物理电子学]