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作 者:ZHANGLi Hong-Jing CHENChuan-Yu
机构地区:[1]DepartmentofMechanicsandElectronics,PanyuPolytechnicsCollege,Panyu511483,China [2]DepartmentofPhysics,GuangzhouUniversity,GuihuagangCampus,Guangzhou510405,China
出 处:《Communications in Theoretical Physics》2003年第2X期225-230,共6页理论物理通讯(英文版)
摘 要:By using determinant method as in our recent work, the IO phonon modes, the orthogonal relation for polarization vector, electron-IO phonon F^6hlich interaction Hamiltonian, the dispersion relation, and the electron-phonon coupling function in an arbitrary layer-number quantum well system have been derived and investigated within the framework of dielectric continuum approximation. Numerical calculation on seven-layer AlxGal-xAs/GaAs systems have been performed. Via the numerical results in this work and previous works, the general characters of the IO phonon modes in an n-layer coupling quantum well system were concluded and summarized. This work can be regarded as a generalization of previous works on IO phonon modes in some fLxed layer-number quantum well systems, and it provides a uniform method to investittate the effects of IO phonons on the multi-layer coupling quantum well systems.
关 键 词:极性界面光学声子模型 耦合量子阱 电子-声子相互作用 哈密顿函数 多层量子阱
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