PAR薄膜中由STM诱导的库仑岛研究  

Research of Coulomb island induced by STM in PAR thin film

作　　者：莫晓亮[1] 姚彦[1] 范智勇[1] 徐华华[2] 杨剑[1] 陈国荣[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]复旦大学化学系,上海200433

出　　处：《功能材料》2003年第4期412-413,417,共3页Journal of Functional Materials

摘　　要：　单有机材料PAR的薄膜在三明治结构中,在电场作用下有电双稳性质。利用这一性质,在STM针尖强电场作用下,PAR可形成纳米尺寸的导电的库仑岛,从而通过电流 电压特性的测量,在室温下观察到了库仑阻塞现象。估算了库仑岛的尺寸和所形成的双势垒隧道结构的参数,理论计算与实验结果相一致,本研究结果提供了一种新的室温单电子晶体管的设计思路。The electrical bistable property of the films made from single organic material (PAR) can be found on the sandwich structure under electric field. In the film, a coulomb island can be formed under high electric field applied by a STM tip. Through the current-voltage measurement, coulomb blockade was observed at room temperature. The data are analyzed using the double barrier tunnel junction model. Parameters of the system were computed and found accordant with theory. This method can contribute to the development of single electron transistor at room temperature.

关 键 词：PAR STM 库仑阻塞 室温单电子晶体管 薄膜 单电子器件 

分 类 号：TN32[电子电信—物理电子学]