Si/SiO_2及Si/SiO_2/Si_3N_4系统的总剂量辐射损伤  

The total dose radiation damage of Si/SiO_2 and Si/SiO_2/Si_3N_4 Systems

作　　者：范隆[1] 郝跃[1] 余学峰[2] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071 [2]中国科学院新疆物理研究所,新疆维吾尔自治区乌鲁木齐830011

出　　处：《西安电子科技大学学报》2003年第4期433-436,共4页Journal of Xidian University

基　　金：国家部委预研基金资助项目(98J11 2 12 ZK0801)

摘　　要：从微观氧化物电荷、界面态的感生变化及界面态的能量分布变化的角度,比较并分析了3种采用54HC电路工艺制作的MOS电容样品的总剂量电离辐射损伤退化,结果显示,采用单绝缘栅介质的Si/SiO2系统的双绝缘栅介质的Si/SiO2/Si3N4系统表现出对总剂量辐射损伤的明显特性差异.在抗总剂量电离辐射能量上,双绝缘栅介质结构甚至劣于常规非加固工艺的单介质Si/SiO2系统结构.同时,对辐射感生界面态的能量分布随辐照总剂量的变化进行了分析,发现试验的3种样品都存在一类深能级界面态,位于中带以上约80meV的位置,该类界面态随辐照剂量的增加最明显.By comparing the total dose irradiation experimental results of MOS capacitors manufactured by three conventional techniques which are currently used in 54HC circuits (High speed CMOS circuits), by virtue of the changes of induced Oxide charge and interface states, and the changes of energy distribution of interface states in bandgap, the total dose damage characteristics of the Si/SiO2 system and the Si/SiO2/Si3N4 system are investigated. The results show that the resistance to total dose radiation damage of the dual-lays dielectrics MOS structure is lower than that of the single-lay dielectric MOS structure. A type of interface state which is located in approximately the 80?meV position above the Si mid-bandgap obviously increases with the increase of total radiation dose for all three testing samples.

关 键 词：氧化物电荷 界面态 能量分布 MOS电容 总剂量辐射损伤 SI/SIO2 Si/SiO2/Si3N4 

分 类 号：TM53[电气工程—电器] TN432[电子电信—微电子学与固体电子学]