InGaAs/AlGaAs半导体激光器二维阵列  

InGaAs/AlGaAs Semiconductor Laser 2-D Arrays

作　　者：辛国锋[1] 陈国鹰[1] 冯荣珠[2] 花吉珍[2] 安振峰[2] 

机构地区：[1]河北工业大学信息学院微电子所,天津300130 [2]中国电子科技集团公司第十三研究所光电专业部,河北石家庄050051

出　　处：《中国激光》2003年第8期684-686,共3页Chinese Journal of Lasers

摘　　要：用金属有机化合物气相淀积 (MOCVD)技术外延生长了InGaAs/AlGaAs分别限制应变单量子阱激光器材料。利用该材料制成半导体激光器一维线阵列 ,然后再串联组装成二维阵列 ,在 1 0 0 0 μs的输入脉宽下 ,输出峰值功率达到 730W (77A) ,输出光功率密度为 4 87W/cm2 ,中心激射波长为 90 3nm ,光谱半宽 (FWHM )为 4 4nm。在此条件下可以稳定工作 86 0Materials of InGaAs/AlGaAs separate confinement heterostructure strained single quantum well were grown by the technology of metal organic chemical vapor deposition (MOCVD). The 1 D semiconductor laser linear arrays were made using this materials,then they were assembled to form 2 D array. It′s peak wavelength is 903 nm, the full width at half maximum (FWHM) is 4 4 nm, the peak output power is 730 W (pulse width 1000 μs, drive current 77 A), and the density of output power is 487 W/cm 2. The laser can work very reliably over 8600 hours in this condition.

关 键 词：激光技术 半导体激光器 金属有机化合物气相淀积 二维阵列 分别限制单量子阱 

分 类 号：TN248.4[电子电信—物理电子学]