Schottky势垒中的电中性能级、平均键能和费米能级  

Charge-neutrality Level, Average-bond-energy and Fermi Level in Schottky Barrier

作　　者：李书平[1] 王仁智[1] 

机构地区：[1]厦门大学物理学系,福建厦门361005

出　　处：《厦门大学学报（自然科学版）》2003年第5期586-590,共5页Journal of Xiamen University：Natural Science

基　　金：厦门大学校级自选课题(Y07010)资助

摘　　要：基于第一原理赝势能带计算,采用电中性能级和平均键能方法计算了7种不同半导体的Schottky接触势垒高度,结果表明2种方法都可用于计算金属 本征半导体的接触势垒高度.文中用于确定接触势垒高度的"本征半导体基态费米能级ESF,i"不同于半导体物理中所指的"本征费米能级Ei".n型半导体接触势垒、p型半导体接触势垒和本征半导体势垒,三者在接触界面附近的费米能级都是"钉扎"于本征半导体基态费米能级ESF,i,是此三者的接触势垒高度大致相同的原因.Based on an ab initio pseudopotentials band structure method, ten barrier heights of metalsemiconductor contacts are calculated by taking the averagebondenergy method and chargeneutrality level method respectively. The result shows that the two methods can be used to calculate the barrier heights of metalsemiconductor contacts. The ground state Fermi level of the intrinsic semiconductor which can be used to determine the barrier height is different from the intrinsic Fermi level in semiconductor physics. Because the Fermi levels of n type,p type and intrinsic type semiconductor at the contact interface are all pinned to the ground state Fermi level of the intrinsic semiconductor,the contact barrier heights of them are very coincident.

关 键 词：Schottky势垒 电中性能级 平均键能 费米能级 半导体 接触势垒高度 第一原理赝势能带计算 

分 类 号：O471.5[理学—半导体物理]