基片温度对强流脉冲离子束烧蚀等离子体沉积类金刚石薄膜结构和性能的影响  

Influence of Substrate Temperature on Structure and Performance of DLC Films Deposited by High-Intensity Pulsed Ion Beam Ablation

作　　者：梅显秀[1] 刘振民[1] 马腾才[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室

出　　处：《真空科学与技术》2003年第4期226-230,234,共6页Vacuum Science and Technology

基　　金：国家自然科学基金重点项目资助课题 :低气压等离子体合成功能薄膜的部分机理研究 ( 198350 30 )

摘　　要：利用强流脉冲离子束 (High intensitypulsedionbeam HIPIB)烧蚀等离子体技术在Si(1 0 0 )基体上沉积类金刚石 (Dia mond likecarbon DLC)薄膜 ,基片温度的变化范围从 2 5℃ (室温 )到 40 0℃。利用Raman谱、X射线光电子谱 (XPS)、X射线衍射(XRD)和原子力显微镜 (AFM)研究基片温度对DLC薄膜的化学结合状态、表面粗糙度、薄膜显微硬度和薄膜内应力的影响。根据XPS和Raman谱分析得出 ,基片温度低于 30 0℃时 ,sp3C杂化键的含量大约在 40 %左右 ;从 30 0℃开始发生sp3C向sp2 C的石墨化转变。随着沉积薄膜时基片温度的提高 ,DLC薄膜中sp3C的含量降低 ,由 2 5℃时 42 .5 %降到 40 0℃时 8.1 % ,XRD和AFM分析得出 ,随着基片温度的增加 ,DLC薄膜的表面粗糙度增大 ,薄膜的纳米显微硬度降低 ,摩擦系数提高 ,内应力降低。基片温度为 1 0 0℃时沉积的DLC薄膜的综合性能最好 ,纳米显微硬度 2 2GPa ,表面粗糙度为 0 75nm ,摩擦系数为 0 .1 1 0。Diamond-like carbon (DLC) films have been deposited on Si substrates at a substrate temperature form 25°C to 400°C by high-intensity pulsed-ion-beam (HIPIB) ablation of graphite targets. Raman spectroscopy, XPS, XRD and AFM were used to characterize the chemical structure, residual stress, and surface roughness of the DLC films. The XPS quantitative analysis shows that the concentration of the sp3 carbon in the films is about 40% when substrate temperature is below 300°C,With the increase of substrate temperature, however, the concentration of the sp3 carbon decreases from 42.5% at 25°C to 8.1% at 400°C. In other words, the sp3 carbon begins to graphitize when substrate temperature is higher than 300°C. The results of XRD and AFM show that the surface roughness of the films increases and the residual stress decreases with increasing substrate temperatures. Nano-microhardness decreases and frictional coefficient increases with the increase of substrate temperatures. The overall performance of the DLC film deposited at 100°C is the best, with nano-microhardness, surface roughness and frictional coefficient being 22 GPa, 0.75 nm and 0.110, respectively.

关 键 词：强流脉冲离子束烧蚀等离子体沉积 类金刚石薄膜 结构和性能 基片温度 

分 类 号：O484[理学—固体物理]