利用等时退火法预估等温退火效应实验研究  

Prediction on the characteristics of isothermal annealing by using isochronal annealing data

作　　者：何宝平[1] 王桂珍[1] 龚建成[1] 罗尹虹[1] 李永宏[1] 

机构地区：[1]西北核技术研究所,西安市69信箱六室710613

出　　处：《物理学报》2003年第9期2239-2243,共5页Acta Physica Sinica

摘　　要：对电离辐照损伤后的MOS器件的等温和等时退火特性进行了研究 ,结果发现 ,首先 ,10 0℃等温退火是有效的 ,等时退火所需的全过程时间最短 ;其次 ,+ 5V栅偏压退火相对于 0V和浮空偏置条件 ,阈值电压恢复速度快、恢复程度大 ;最后 ,利用等时退火数据对等温效应进行了理论预估 。In this paper the characteristics of isothermal and isochronal annealing for post-radiated MOS transistor were studied. The results show that 100degreesC isothermal annealing is the most effective treatment, while the time of isochronal annealing is the shortest. Secondly, the recovery of threshold voltage under the + 5V bias is the fastest and biggest, compared to that under 0V and float bias. These predictied results by using isochronal annealing data were compared with the experiment curve obtained from isothermal annealing, and the agreement is good.

关 键 词：等时退火法 等温退火效应 实验研究 预估 MOS器件 金属-氧化物-半导体器件 

分 类 号：TN306[电子电信—物理电子学]