功率AlGaAs/GaAs HBT自加热频率特性  

High-frequency Performance Including Self-heating Effect for AlGaAs/GaAs Power HBT's

作　　者：王源[1] 张义门[1] 张玉明[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《计算物理》2003年第5期467-470,共4页Chinese Journal of Computational Physics

摘　　要：　提出了一种功率AlGaAs/GaAsHBT的自加热温度模型,讨论了在大电流条件下,器件晶格温度升高和基区扩展效应对HBT器件频率特性的影响,并对器件的晶格温度、截止频率和最高振荡频率在自加热条件下的变化分别进行了计算和模拟.A selfheating model is presented to predict the highfrequency performance of AlGaAs/GaAs heterojunction bipolar transistors (HBT's) including high current and thermal effects. A base pushout effect is discussed at high current region. And in this case, the lattice temperature, the cutoff frequency and the maximum frequency versus the collector current density are achieved.

关 键 词：功率AlGaAs/GaAsHBT 自加热 温度模型 频率特性 异质结双极性晶体管 晶格温度 截止频率 最高振荡频率 

分 类 号：TN322.8[电子电信—物理电子学] TN325.3