在Si衬底上自组装生长Ge量子点研究进展  

Research progress of self-assembled Ge quantum dots on a Si substrate

作　　者：黄昌俊[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所集成光电国家重点联合实验室,北京100083

出　　处：《物理》2003年第8期528-532,共5页Physics

基　　金：国家自然科学基金重大项目 (批准号 :698962 60 );国家重点基础研究发展计划 (批准号 :G2 0 0 0 0 3 660 3 )资助项目

摘　　要：在Si衬底上自组装生长纳米尺度的Ge量子点 ,由于三维量子限制效应的贡献 ,能够在能带结构上对Si、Ge天然材料的间接带特性实施准直接带结构的改性 ,使激子行为和带间复合跃迁得到大幅度增强 ,同时Ge量子点的可控有序相关排列还有助于发展新一代的Si基电子波量子器件 .文章回顾了自 2 0世纪 80年代末至今Ge/Si量子点生长研究的重要进展 ,对其潜在的重要应用作出了评述 .结合作者自己的研究结果 ,着重介绍了Ge量子点的生长动力学及其形态的演变过程 ,指出自组装生长的Ge/Si量子点属Ⅱ型能带结构 ,其发光效率比一维量子阱有很大增强 .探讨了用模板衬底实现对Ge量子点尺寸和分布的有序可控生长方法与途径 .Indirect energy band structure can be transformed to a direct structure in nano-scale Ge quantum dots materials self-assembled on a Si substrate, as a result of the three dimensional quantum confinement effect. Enhancement of the exciton behavior and radiative transition via the energy band gap present a possible way for development of effective Si-based active photonic devices and the realization of ordered and uniform Ge quantum dot arrays. Their controllable fabrication, will be helpful for the development of a new generation of Si-based electron-wave quantum devices. A review is presented on the recent development of self-assembled Ge/Si quantum dots and possible wide applications. With reference for our recent research results, emphasis is given to the morphological evolution of Ge grown on a Si (001) substrate and their dynamical process, derivation of the type-Ⅱenergy band diagram of Ge/Si quantum dots through photo-luminescence studies, and our efforts to fabricate ordered and uniform Ge/Si quantum dot arrays with a Si pattern substrate.

关 键 词：自组装生长 GE量子点 SI衬底 Si基电子波量子器件 生长动力学 能带结构 量子阱 纳米结构 

分 类 号：TN304.05[电子电信—物理电子学]