倒装焊组装的光电混合集成RCE探测器面阵  

Flip Chip Assembly Hybrid Optoelectronic Integrated RCE Photo-detector Arrays

作　　者：裴为华[1] 陈弘达[1] 邓晖[1] 毛陆虹[1] 杜云[1] 唐君[1] 梁琨[1] 吴荣汉[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《光电子．激光》2003年第9期893-896,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学重大资助项目(969896260);国家自然科学基金重点资助项目(69789802);国家"863"高技术资助项目(2001AA312080;2002AA312240;2001AA122032)

摘　　要：报道了一种可用于并行光传输系统的64×64光探测器面阵。器件结构采用谐振腔增强型(RCE),吸收区由3层InGaAs/GaAs量子阱构成,谐振腔是由2组多层布拉格结构的反射镜组成,工作波长位于980nm。该器件利用倒装焊技术,将GaAs基的谐振腔增强型光探测器面阵与相应的Si基标准CMOS集成电路混合集成在一起,形成具备64×64路光并行接收及处理的大规模光电集成探测器面阵器件,并对光探测器面阵的主要特性进行了测试,测试结果显示该面阵具有均匀的电特性,反向偏压均大于14V,暗电流约为10nA数量级。Character of a 64×64 photo-detector array which can be applied to parallel optic communication was presented. The detector is consist of a resonance and a absorber which made by three InGaAs/GaAs quantum well. And the resonance is made by two DBR. The detector operate at a wavelength of 980 nm. Flip chip bonding was used to assemble the device to a Si-based integrated circuits, which was applied to deal with the photocurrent generated by the detector and was fabricated by standard CMOS technology. Then a hybrid integrated 64 × 64 photo-detector array was formed and the electric character test result was desired. The device has fine electric character. The reverse voltage of each unit is above 14 V and the dark current of each unit is about 10 nA.

关 键 词：倒装焊 光探测器面阵 谐振腔增强型 INGAAS/GAAS量子阱 

分 类 号：TN256[电子电信—物理电子学] TN305.94