氧等离子体处理聚硅烷涂层制备二氧化硅薄膜  

Preparation of Thin SiO_2 Films from Polysilane Coatings Using Oxygen Plasma Method

作　　者：向少华[1] 谢茂浓[2] 

机构地区：[1]怀化学院物理系,湖南怀化418008 [2]四川大学物理系,四川成都610064

出　　处：《怀化师专学报》2002年第2期48-50,共3页Journal of Huaihua Teachers College

基　　金：国家自然科学基金资助项目 (2 97710 2 4 )

摘　　要：用氧等离子体法在低温下已将自合成的聚硅烷涂层成功地转变为二氧化硅薄膜 红外光谱分析表明薄膜的Si-O伸缩振动特征峰为 10 75cm-1,并随处理时间的延长峰位向高波数移动 ,可至 10 88cm-1 光电子能谱测得薄膜中的O1s和Si2p的电子结合能分别为 5 33 0ev和 10 3 8ev ,硅氧原子接近化学计量比Silicon dioxide films were prepared successfully from self made polysilane coatings treated by oxygen plasma method at low temperature The result of IR,XPS and Raman showed that silicon dioxide films had an intense infrared absorption band of Si O at 1075cm -1 ,up to 1088cm -1 with the increasing of treatment time,O1s and Si2p binding energies of 533 0 ev and 103 8 ev,respectively,and an intense Raman characteristic peak The atom rations of O/Si was near to the stoichiometric

关 键 词：二氧化硅薄膜 制备方法 氧等离子体法 聚硅烷涂层 电子结合能 Si-O伸缩振动 

分 类 号：TN304.055[电子电信—物理电子学]