氮气氛中高温热处理硅片表面的直接氮化  

Direct-Nitridation of Silicon by Heat-Treating at High Temperature in Nitrogen Ambience

作　　者：祝洪良[1] 杨德仁[1] 汪雷[1] 裴艳丽[1] 阙端麟[1] 张寒洁[2] 何丕模[2] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027 [2]浙江大学物理系,杭州310027

出　　处：《Journal of Semiconductors》2003年第10期1049-1052,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :5 0 0 32 0 10 )~~

摘　　要：研究了直拉硅单晶片在氮气氛下热处理时的表面氮化 ,利用了XPS(X射线光电子谱 )、SEM(扫描电子显微镜 )、金相显微镜、XRD(X射线衍射仪 )等手段研究了在高纯氮和非高纯氮保护条件下不同温度热处理后的样品表面 ,结果发现只有用高纯氮保护和温度高于 110 0℃的条件下 ,氮气才能与硅表面发生反应 ,生成氮化硅 (Si3 N4 )薄膜 ,否则氮保护中微量的氧气会和硅表面发生反应 ,生成二氧化硅 (SiO2 )薄膜 .Nitridation of Czochralski (CZ) silicon in nitrogen ambience and nitridation mechanism are studied.The samples annealed in pure and normal nitrogen at different temperature are investigated using XPS(X-ray photoelectron spectroscopy),SEM(scanning electron microscopy),optical microscopy,and XRD(X-ray diffraction).It is found that silicon nitride(Si 3N 4) film is generated during heat treatment only in pure nitrogen and at high temperature (>1100℃).Silicon dioxide(SiO 2) is found in the samples annealed in normal nitrogen because of a little of oxygen mixed in the ambience,which is much easier to react with silicon than in pure nitrogen.

关 键 词：氮化硅 X射线光电子谱 氮化 

分 类 号：TN304[电子电信—物理电子学]