超薄顶层硅SOI衬底上高k栅介质ZrO_2的性能  

High k Gate Dielectric ZrO_2 Thin Films on SOI Substrate with Ultra-Thin Top Silicon

作　　者：章宁琳[1] 宋志棠[1] 沈勤我[1] 林成鲁[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《Journal of Semiconductors》2003年第10期1099-1102,共4页半导体学报（英文版）

基　　金：国家重点基础研究专项经费资助项目 (Nos .G2 0 0 0 0 36 5 ;0 0 1CB6 10 40 8)~~

摘　　要：采用超高真空电子束蒸发法制备了用于全耗尽SOI场效应晶体管 (MOSFET)中作为高k栅介质的ZrO2 薄膜 .X射线光电子能谱 (XPS)分析结果显示 :ZrO2 薄膜成分均一 ,为完全氧化的ZrO2 ,其中Zr∶O =1∶2 2 ,锆氧原子比偏高可能是由于吸附了空气中O2 等杂质 .扩展电阻法 (SRP)和剖面透射电镜 (XTEM)都表征出 6 0 0℃退火样品清晰的ZrO2 /topSi/BO/Sisub的结构 ,其中ZrO2 /topSi界面陡直 ,没有界面产物生成 .选区电子衍射显示薄膜在 6 0 0℃快速退火后仍基本呈非晶态 .研究了上述MOSOS结构的高频C V性能 ,得到ZrO2 薄膜的等效氧化物厚度EOT =9 3nm ,相对介电常数ε≈ 2 1,平带电位VFB=- 2 4 5 1eV .Ultra-high vacuum electron evaporation is used to deposit high k gate dielectric ZrO 2 thin films on SOI substrate with ultrathin top silicon to be applied in SOI MOSFET depleted fully.XPS is applied to detect the chemical information of the films.XPS results show that the zirconia films are uniform and fully oxidized.The atomic ratio of Zr∶O is 1∶2.2,which is higher than that in the case of ZrO 2,probably due to the absorption of the impurities,i.e.,O 2 from ambient.Both SRP and XTEM prove the clear structure of ZrO 2/top Si/BO/Si sub.And the interface between ZrO 2 and top silicon is abrupt without interfacial product.Selected area diffraction (SAD) gives the information that the ZrO 2 thin films is almost amorphous after RTA in O 2 at 600℃.High frequency at 1MHz C-V characteristics is studied with the SOI MOSOS capacitor formed by electron beam evaporation of Al as top and bottom electrodes.The results reveal EOT=9.3nm,ε≈21,V FB=-2.451eV.

关 键 词：超高真空电子束蒸发法 全耗尽SOI MOSFET 高K栅介质 ZRO2 

分 类 号：TN304.05[电子电信—物理电子学]