等离子体浸没式离子注入-离子束增强沉积TiN膜研究  

An Investigation on the TiN Film Prepared by Means of PIII-IBAD

作　　者：王钧石[1] 柳襄怀[2] 黄楠[1] 孙宏[1] 王良辉[1] 

机构地区：[1]西南交通大学,成都610031 [2]上海微系统与信息技术研究所,上海200050

出　　处：《材料开发与应用》2003年第5期17-20,共4页Development and Application of Materials

基　　金：中国科学院上海微系统与信息技术研究所离子束重点实验室应用基础研究基金(10002)

摘　　要：本文采用一种新型的等离子体浸没式离子注入 离子束增强沉积的技术(PIII IBAD),在Cr12MoV钢基体上制备出了TiN膜,对沉积膜的组织进行了光电子能谱分析,并对沉积膜进行了硬度检测、摩擦试验及磨痕形貌分析。试验结果表明,沉积膜中的组织为TiN、TiO2和Ti2O3,TiN膜具有高达Hv3200的高硬度和极其优良的摩擦性能。The TiN film is prepared on the substrate of Cr12MoV steel by means of plasma immersion ion implantationion beam assisted deposition (PIIIIBAD). The structure and the tribological property including microhardness, friction coefficient and wearing traces are investigated respectively with Xray photoelectron spectroscopy (XPS), hardness tester, sliding friction tests and scanning electron microscopy (SEM). The results indicate that the structure of the film is consisted of TiN, TiO2 and Ti2O3 and the film possesses high hardness up to Hv3200 and high wearing capacity.

关 键 词：等离子体浸没式离子注入-离子束增强沉积(PⅢ-IBAD) TIN膜 显微硬度 摩擦性能 

分 类 号：TQ153.19[化学工程—电化学工业] TG174.444[金属学及工艺—金属表面处理]