980nm InGaAs/GaAs/AlGaAs大功率LDs模式特性研究  

Study on Lateral Mode of InGaAs/GaAs/AlGaAs 980 nm High-power LDs

作　　者：崔碧峰[1] 李建军[1] 邹德恕[1] 王东凤[1] 沈光地[1] 

机构地区：[1]北京市光电子技术实验室北京工业大学电子信息与控制工程学院,北京100022

出　　处：《光电子．激光》2003年第10期1011-1014,共4页Journal of Optoelectronics·Laser

基　　金：国家"973"基金资助项目(G20000683-02);国家"863"计划资助项目(2002AA312070);国家自然科学基金(69889601);北京市自然科学基金资助项目(4032007;4021001);北京市科委科技攻关资助项目(99270603)

摘　　要：针对目前大功率980nm量子阱半导体激光器(LDs)为降低阈值电流而要求激射条宽窄、腐蚀深度深而造成的P I曲线扭折、侧向模式不稳定问题采用有效折射率近似方法进行模拟分析,并得到了实验上的证实。通过采用不对称波导及双量子阱结构,制备了低阈值(19mA)模式稳定的InGaAs/GaAs/Al GaAsLDs,其斜率效率0.6W/A(8μm×500μm,未镀膜器件),在输出功率达到100mW时保持横模、侧模的稳定。The origin that influenced the stabilization of lateral pattern mode in low current high power quantum wells(QWs) laser diodes(LDs) was theoretically and experimentally analyzed.The laser structure was simulated with effective refractive index approximation mode by computer,and double QWs active region and asymmetric cladding layer structure lasers were designed and fabricated.The threshold current is 19 mA,and the slope efficiency reaches 0.6 W/A (8μm×500 μm,uncoating),and this diode could retain steady single lateral mode up to 100 mW output power.

关 键 词：量子阱半导体激光器 有效折射率近似 侧模 稳定性 不对称波导 

分 类 号：TN248.4[电子电信—物理电子学]