从n型硅到RTN超薄SiO_2膜的电流传输特性  

Characteristics of Current Transportation from n-Si into Lamp Heating Rapid Thermal Nitridation Ultra-thin SiO_2 Films

作　　者：冯文修[1] 张恒[1] 陈蒲生[1] 田浦延[1] 

机构地区：[1]华南理工大学应用物理系,广东广州510640

出　　处：《华南理工大学学报（自然科学版）》2003年第10期51-54,共4页Journal of South China University of Technology(Natural Science Edition)

摘　　要：用卤素钨灯作辐射热源 ,对超薄 (1 0nm )SiO2 膜进行快速热氮化 (RTN) ,制备了SiOxNy 超薄栅介质膜 ,并制作了Al/n Si/SiOxNy/Al结构电容样品 .研究了不同样品中n型Si到快速热氮化超薄SiO2 膜的电流传输特性及其随氮化时间的变化 .结果表明 :低场时的漏电流很小 ;进入隧穿电场时 ,I E曲线遵循Fowler Nordheim (F N)规律 ;在更高的电场时 ,主要出现两种情形 ,其一是I E曲线一直遵循F N规律直至介质膜发生击穿 ,其二是I E曲线下移 ,偏离F N关系 ,直至介质膜发生击穿 .研究表明 ,I E曲线随氮化时间增加而上移 .By the rapid thermal nitridation (RTN) of ultra thin (10 nm) SiO 2 films, the ultra thin SiO x N y dielectric films had been prepared with tungsten halogen lamp as radiation source, and the Al/n Si/SiO x N y /Al capacitors had been fabricated too. The characteristics and their variation with nitridation time of current transportation from n Si to lamp heating rapid thermal nitridation ultra thin SiO 2 films of the capacitor samples were investigated. The results show that in the lower field region the leakage current is little. When the field is in the tunneling region, the current changes following the F N rule. When the field is more stubborn, two phenomena may occur: one is that the characteristics follow F N rule until the breakdown, and the other is that the characteristics move down and depart F N rule until the breakdown. As the RTN time increases, I E curves move up all. All these experimental results have been discussed.

关 键 词：快速热氮化 超薄SiO2膜 电流传输特性 

分 类 号：O483.3[理学—固体物理]